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SEMICONDUCTOR
TECHNICAL DATA
RF Switching for VCR/DVD/Set Top Box Tuner FEATURES
Low loss at on state(Typ 1dB@1GHz) With built-in bias diode Gate 3.3V operating
A J 1 M
KTK921U
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E B M 4 D
2
3
H N K N
DIM A B C D E H J K L M N
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.15+0.1/-0.06 1.30
0.00 ~ 0.10 0.70 0.42 0.10 MIN
C
1. Diode Cathode 2. FET Gate & Diode Anode 3. FET Drain 4. FET Source
FET Maximum Ratings (Ta=25
CHARACTERISTIC Drain-Source-Voltage Drain-Gate-Voltage Source-Gate-Voltage Drain Current
)
SYMBOL VDS VDG VSG ID 7 7 10 RATING 3 UNIT V V V mA
L
USQ
EQUIVALENT CIRCUIT
4(S) 3(D)
DIODE Maximum Ratings (Ta=25
CHARACTERISTIC Reverse Voltage Forword Current
)
SYMBOL VR IF RATING 35 100 UNIT V mA
1(C) 2(G,A)
Marking
4 3
Lot No.
FET DIODE Maximum Ratings (Ta=25
CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL PC Tj Tstg RATING 200 150 -55~150 UNIT mW
Type Name
MC
1 2
2010. 2. 17
Revision No : 0
1/2
KTK921U
FET ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Gate-Source Breakdown Voltage Gate-Source Pinch-off Voltage Drain-Source Leakage Current Gate Cut-off Current Drain-Source On-State Resistance SYMBOL V(BR)GSS VGS(OFF) IDSX IGSS RDS(ON)
)
TEST CONDITIONS MIN -7 , IF=0, f 1GHz -30 -30 TYP -1.9 20 -1.3 -38 1 0.65 1 0.65 MAX -2.5 10 -100 25 -2.5 -3.5 dB dB dB dB dB dB pF pF pF pF UNIT V V A nA
VDS=0, IGS=-0.1mA VDS=1V, ID=20 A VDS=2V, VGS=-3.3V VDS=0, VGS=-3.3V VGS=0, ID=1mA VSC=VDC=0, RS=RL=50
Loss(On-State) Note1
S21(ON) 2
VSC=VDC=0, RS=RL=50 VSC=VDC=0, RS=RL=75
, IF=0, f=1GHz , IF=0, f 1GHz
VSC=VDC=3.3V, RS=RL=50 Isolation (Off-State) Note1
S21(OFF) 2
, IF=1mA, f 1GHz , IF=1mA, f= 1GHz , IF=1mA, f 1GHz
VSC=VDC=3.3V, RS=RL=50 VSC=VDC=3.3V, RS=RL=75
Input Capacitance Note2
Cic
VSC=VDC=5V, IF=1mA, f=1MHz VSC=VDC=0, IF=0, f=1MHz VSC=VDC=5V, IF=1mA, f=1MHz VSC=VDC=0, IF=0, f=1MHz
Output Capacitance Note2
Coc
Note : 1 IF=Diode Forward Current 2 Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc;
DIODE ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward Voltage Reverse Current Reverse Voltage Total Capacitance Series Resistance Fig. S21(on) 2
S21(off)
2
)
TEST CONDITIONS MIN 35 TYP 0.7 0.5 MAX 0.85 0.1 1.2 0.9 V pF UNIT V
SYMBOL VF IR VR CT rS IF=2mA VR=15V IR=1
VR=6V, f=1MHz IF=2mA, f=100MHz
Test Circuit
V 1nF
100k On-State : V=0V Off-State : V=3.3V 47k 50 Input 1nF 1nF 50 Output
4.7k 100k
V
1nF
2010. 2. 17
Revision No : 0
2/2

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